Semiconductor device and method for fabricating the same

ABSTRACT

A semiconductor device including a first fin protruding on a substrate and extending in a first direction; a first gate electrode on the first fin, the first gate electrode intersecting the first fin; a first trench formed within the first fin at a side of the first gate electrode; a first epitaxial layer filling a portion of the first trench, wherein a thickness of the first epitaxial layer becomes thinner closer to a sidewall of the first trench; and a second epitaxial layer filling the first trench on the first epitaxial layer, wherein a boron concentration of the second epitaxial layer is greater than a boron concentration of the first epitaxial layer.

CROSS-REFERENCE TO RELATED APPLICATION

Korean Patent Application No. 10-2016-0148737 filed on Nov. 9, 2016 inthe Korean Intellectual Property Office, and entitled: “SemiconductorDevice and Method for Fabricating the Same,” is incorporated byreference herein in its entirety.

BACKGROUND 1. Field

Embodiments relate to a semiconductor device and a method forfabricating the same.

2. Description of the Related Art

As one of the scaling technologies to increase the density ofsemiconductor devices, a multi-gate transistor has been suggested, inwhich silicon bodies in a fin or nano wire shape are formed on asubstrate, with gates then being formed on surfaces of the siliconbodies.

SUMMARY

The embodiments may be realized by providing a semiconductor deviceincluding a first fin protruding on a substrate and extending in a firstdirection; a first gate electrode on the first fin, the first gateelectrode intersecting the first fin; a first trench formed within thefirst fin at a side of the first gate electrode; a first epitaxial layerfilling a portion of the first trench, wherein a thickness of the firstepitaxial layer becomes thinner closer to a sidewall of the firsttrench; and a second epitaxial layer filling the first trench on thefirst epitaxial layer, wherein a boron concentration of the secondepitaxial layer is greater than a boron concentration of the firstepitaxial layer.

The embodiments may be realized by providing a semiconductor deviceincluding a substrate that includes a first region and a second region;a first fin and a second fin protruding on the substrate andrespectively formed on the first region and the second region, whereinthe first fin and the second fin respectively extend in a firstdirection and a second direction; a first gate electrode on the firstfin and intersecting the first fin; a second gate electrode on thesecond fin and intersecting the second fin; a first trench within thefirst fin at a side of the first gate electrode; a second trench withinthe second fin at a side of the second gate electrode; a first epitaxiallayer partially filling a portion of the first trench; a secondepitaxial layer partially filling the first trench on the firstepitaxial layer; a third epitaxial layer filling the second trench; andan insulating region between a bottom surface of the second trench andthe third epitaxial layer.

The embodiments may be realized by providing a semiconductor deviceincluding a substrate; a first fin on the substrate, the first finextending in a first direction; a first gate electrode on the first fin,the first gate electrode intersecting the first fin; a first trench inthe first fin, the first trench being at a side of the first gateelectrode; a first epitaxial layer in a bottom portion of the firsttrench; and a second epitaxial layer on the first epitaxial layer, thesecond epitaxial layer filling remaining portions of the first trench,wherein a boron concentration of the second epitaxial layer isdiscontinuous with a boron concentration of the first epitaxial layer atan interface between the first epitaxial layer and the second epitaxiallayer.

BRIEF DESCRIPTION OF THE DRAWINGS

Features will be apparent to those of skill in the art by describing indetail exemplary embodiments with reference to the attached drawings inwhich:

FIG. 1 illustrates a layout view of a semiconductor device according tosome exemplary embodiments.

FIG. 2 illustrates a cross sectional view taken along line A-A of FIG.1.

FIG. 3 illustrates a cross sectional view taken along line B-B of FIG.1.

FIG. 4 illustrates a simulation graphical representation provided toshow off current characteristics of a semiconductor device according tosome exemplary embodiments.

FIG. 5 illustrates a simulation graphical representation provided toshow junction capacitance characteristics of a semiconductor deviceaccording to some exemplary embodiments.

FIG. 6 illustrates a cross sectional view of a semiconductor deviceaccording to some exemplary embodiments.

FIG. 7 illustrates a cross sectional view of a semiconductor deviceaccording to some exemplary embodiments.

FIG. 8 illustrates a cross sectional view of a semiconductor deviceaccording to some exemplary embodiments.

FIG. 9 illustrates a cross sectional view of a semiconductor deviceaccording to some exemplary embodiments.

FIG. 10 illustrates a layout view of a semiconductor device according tosome exemplary embodiments.

FIG. 11 illustrates a cross sectional view taken along lines A1-A1 andA2-A2 of FIG. 10.

FIG. 12 illustrates a cross sectional view taken along lines B1-B1 andB2-B2 of FIG. 10.

FIG. 13 illustrates a cross sectional view of a semiconductor deviceaccording to some exemplary embodiments.

FIGS. 14 to 20 illustrate views showing stages in a method forfabricating a semiconductor device according to some exemplaryembodiments.

DETAILED DESCRIPTION

Hereinafter, a semiconductor device according to some exemplaryembodiments will be described with reference to FIGS. 1 to 5.

FIG. 1 illustrates a layout view of a semiconductor device according tosome exemplary embodiments, and FIG. 2 illustrates a cross sectionalview taken along line A-A of FIG. 1. FIG. 3 illustrates a crosssectional view taken along line B-B of FIG. 1, and FIG. 4 illustrates asimulation graphical representation showing off current characteristicsof a semiconductor device according to some exemplary embodiments. FIG.5 illustrates a simulation graphical representation showing junctioncapacitance characteristics of a semiconductor device according to someexemplary embodiments.

Referring to FIGS. 1 to 3, the semiconductor device according to someexemplary embodiments may include a substrate 100, a first fin F1, firstto third gate electrodes G1-G3, a first trench 190, a first epitaxiallayer 170, a second epitaxial layer 180, and an interlayer insulatingfilm 300.

In an implementation, the substrate 100 may be formed of one or moresemiconductor materials, e.g., Si, Ge, SiGe, GaP, GaAs, SiC, SiGeC,InAs, or InP. In an implementation, a silicon on insulator (SOI)substrate may be used. For convenience of explanation, the followingwill describe that the substrate 100 includes Si.

The first fin F1 may be a part of the substrate 100, and may include anepitaxial layer grown from the substrate 100. For example, the first finF1 may include Si or SiGe. The first fin F1 may protrude from thesubstrate 100 in a third direction Z1. Accordingly, a height of an uppersurface may be a reference with which the substrate 100 and the firstfin F1 are identified.

The first fin F1 may extend in a first direction X1. For example, thefirst fin F1 may have a long side in the first direction X1 and a shortside in a second direction Y1. In an implementation, the long side andthe short side may be expressions indicating relative lengths. Forexample, in a layout of a rectangle, the long side may indicate a sideillustrated longer than the short side. For example, the first fin F1may extend lengthwise in the first direction X1 which is a long sidedirection.

The first fin F1 may include a same material as the substrate 100. In animplementation, the first fin F1 may include Si.

A field insulating film 105 may be formed on the substrate 100, maypartially cover a sidewall of the first fin F1, and may expose an upperportion of the first fin F1. For example, the upper surface of thesubstrate 100 may be covered by the field insulating film 105, exceptfor a portion where the first fin F1 is protruded. In an implementation,the field insulating film 105 may be, e.g., an oxide film.

The first to third gate electrodes G1-G3 may extend lengthwise in thesecond direction Y1. The first to third gate electrodes G1-G3 may beformed on the first fin F1. For example, the first to third gateelectrodes G1-G3 may intersect the first fin F1. The first to third gateelectrodes G1-G3 may be spaced apart from each other in the firstdirection X1. For example, the first to third gate electrodes G1-G3 maybe disposed so that long sides thereof face each other in the firstdirection X1. Accordingly, the first to third gate electrodes G1-G3 mayextend in parallel in the second direction Y1.

The first gate electrode G1 may be positioned between the second gateelectrode G2 and the third gate electrode G3. For example, the first tothird gate electrodes G1-G3 may be disposed in an order of the secondgate electrode G2, the first gate electrode G1 and the third gateelectrode G3 along the first direction X1.

The first to third gate electrodes G1-G3 may be formed along an uppersurface of the first fin F1 and along a side surface of the uppersurface of the field insulating film 105. The sectional view of FIG. 2illustrates that the first to third gate electrodes G1-G3 are on theupper surface of the first fin F1.

First to third interfacial layers 111-113 may be formed under the firstto third gate electrodes G1-G3. In an implementation, first to thirdhigh-k dielectric films 121-123 may be formed on a lower or bottomsurface and a side surface of the first to third gate electrodes G1-G3.First to third capping films 151-153 may be formed on the upper or topsurfaces of the first to third gate electrodes G1-G3.

The first to third interfacial layers 111-113 may be formed on the uppersurface of the first fin F1. The first to third interfacial layers111-113 may be formed by oxidizing the upper surface and the sidesurface of the first fin F1 and the upper surface of the substrate 100.In an implementation, the first to third interfacial layers 111-113 maybe formed by oxidizing the upper surface and the side surface of thefirst fin F1 instead of the upper surface of the substrate 100.

The first to third interfacial layers 111-113 may be formed respectivelybetween first to third gate spacers 161-163. The first to thirdinterfacial layers 111-113 may include a silicon oxide film when thefirst fin F1 includes silicon. Each of the first to third interfaciallayers 111-113 may be a membrane provided to adjust interfacialcharacteristics between the first fin F1 and the first to third gateelectrodes G1-G3. In an implementation, the first to third interfaciallayers 111-113 may be omitted.

The first to third high-k dielectric films 121-123 may be respectivelyformed on the first to third interfacial layers 111-113. The first tothird high-k dielectric films 121-123 may include a high-k dielectricmaterial having a higher dielectric constant than the silicon oxidefilm. In an implementation, the high-k dielectric material may include,e.g., hafnium oxide, hafnium silicon oxide, lanthanum oxide, lanthanumaluminum oxide, zirconium oxide, zirconium silicon oxide, tantalumoxide, titanium oxide, barium strontium titanium oxide, barium titaniumoxide, strontium titanium oxide, yttrium oxide, aluminum oxide, leadscandium tantalum oxide, or lead zinc niobate.

When the first to third interfacial layers 111-113 are omitted in thesemiconductor device according to some exemplary embodiments, the firstto third high-k dielectric films 121-123 may respectively include notonly the high-k dielectric material, but also a silicon oxide film, asilicon oxynitride film, or a silicon nitride film.

Each of the first to third high-k dielectric films 121-123 may be formedconformally along an inner side surface of the first to third gatespacers 161-163 to be described below, as well as the upper surfaces ofthe first to third interfacial layers 111-113. Accordingly, an uppermostportion of the upper surface of the first to third high-k dielectricfilms 121-123 may have a same height as the upper surface of the firstto third gate spacers 161-163.

The first to third gate electrodes G1-G3 may respectively include firstto third work function metals 131-133 and first to third fill metals141-143. For example, the first gate electrode G1 may include the firstwork function metal 131 and the first fill metal 141, the second gateelectrode G2 may include the second work function metal 132 and thesecond fill metal 142, and the third gate electrode G3 may include thethird work function metal 133 and the third fill metal 143.

The first to third work function metals 131-133 may play a role ofadjusting a work function, and the first to third fill metals 141-143may play a role of filling the space formed by the first to third workfunction metals 131-133. The first to third work function metals 131-133may include, e.g., an N-type work function metal, a P-type work functionmetal, or a combination thereof.

The semiconductor device according to some exemplary embodiments may bea P-type MOSFET. In an implementation, the first to third work functionmetals 131-133 may be a combination of the N-type work function metaland the P-type work function metal. In an implementation, the first tothird work function metals 131-133 may include, e.g., TiN, WN, TiAl,TiAlN, TaN, TiC, TaC, TaCN, TaSiN, or a combination thereof.

In an implementation, the first to third fill metals 141-143 mayinclude, e.g., W, Al, Cu, Co, Ti, Ta, poly-Si, SiGe, or a metal alloy.

The first to third capping films 151-153 may be formed on the first tothird high-k dielectric films 121-123 and the first to third gateelectrodes G1-G3. The first to third capping films 151-153 may include,e.g., SiN. The first to third capping films 151-153 may be in contactwith inner walls of the first to third gate spacers 161-163. In animplementation, the upper surfaces of the first to third capping films151-153 may be on a same level as the upper surfaces of the first tothird gate spacers 161-163. In an implementation, the upper surfaces ofthe first to third capping films 151-153 may be higher than the uppersurfaces of the first to third gate spacers 161-163.

The first to third gate spacers 161-163 may be disposed on the sidewallsof the first to third gate electrodes G1-G3 respectively extending inthe second direction Y1. For example, the first to third gate spacers161-163 may be respectively disposed on the sidewall of a stackstructure of the first to third interfacial layers 111-113, the first tothird high-k dielectric films 121-123, the first to third gateelectrodes G1-G3, and the first to third capping films 151-153.

In an implementation, the first to third spacers 161-163 may include,e.g., silicon nitride (SiN), silicon oxynitride (SiON), silicon oxide(SiO₂), silicon oxycarbonitride (SiOCN), or a combination thereof.

In an implementation, as exemplified in the drawings, the first to thirdgate spacers 161-163 may include a single film, or may be a multi-spacerin which a plurality of films are stacked. Shapes of the first to thirdgate spacers 161-163 and shapes of the multi-spacers forming the firstto third gate spacers 161-163 may each be I- or L-shape, or acombination thereof depending on fabrication or purpose of utilization.

The first trench 190 may be formed between the first to third gateelectrodes G1-G3. The first trench 190 may be formed within the firstfin F1. For example, the first trench 190 may be formed between thefirst gate electrode G1 and the second gate electrode G2 and between thefirst gate electrode G1 and the third gate electrode G3.

The first trench 190 may be in contact with the lower surfaces of thefirst to third gate spacers 161-163. This may be attributable to theetch process of the first trench 190 including a process of widening aside.

A bottom surface of the first trench 190 may be a downward convex shape.In an implementation, the first trench 190 may have a greater depthfarther away from the sidewall of the first trench 190, e.g., toward acenter of the first trench 190.

In an implementation, as illustrated in FIG. 2, a depth of the firsttrench 190 may be lower than a height of the first fin F1. In animplementation, the depth of the first trench 190 may be greater than aheight of the first fin F1.

The first epitaxial layer 170 may be formed on a lower portion of thefirst trench 190. For example, first epitaxial layer 170 may fill only aportion of the first trench 190. The first epitaxial layer 170 may bedirectly in contact with the bottom surface of the first trench 190, andmay be directly in contact with a portion of the side surface of thefirst trench 190.

The upper surface of the first epitaxial layer 170 may be a downward(e.g., inward) convex shape. This may be attributable to the formationof the first epitaxial layer 170 with the epitaxial growth, from thebottom surface of the first trench 190 which is convex downward.

The first epitaxial layer 170 may have a thicker thickness farther awayfrom the side surface of the first trench 190. For example, a thicknessh1 at a center (which is far from the side surfaces, e.g., both sidesurfaces, of the first trench 190 of the first epitaxial layer 170 maybe greater than a thickness h2 which is near to the side surfaces, e.g.,both side surfaces, of the first trench 190.

The second epitaxial layer 180 may be formed on the first epitaxiallayer 170. The second epitaxial layer 180 may entirely fill the firsttrench 190 (e.g., remaining portions of the trench not filled by thefirst epitaxial layer 170). Accordingly, the side surface of the secondepitaxial layer 180 may directly contact the rest of the sidewall of thefirst trench 190. For example, the side surface of the first trench 190may be in contact with the first epitaxial layer 170 and the secondepitaxial layer 180.

Both of the first and second epitaxial layers 170, 180 may includesilicon germanium (SiGe). In an implementation, a germanium ratio ofsilicon germanium may be different in the first epitaxial layer 170 andthe second epitaxial layer 180. In an implementation, the ratio ofgermanium relative to silicon of the first epitaxial layer 170 may belower than a germanium to silicon ratio of the second epitaxial layer180. In an implementation, the germanium concentration of the firstepitaxial layer 170 may be lower than a germanium concentration of thesecond epitaxial layer 180.

This may be attributable to characteristic of the epitaxial growth. Forexample, the Si-containing first fin F1 would hinder formation of asilicon germanium layer having a high germanium concentration with theepitaxial growth, a silicon germanium layer having a lower germaniumconcentration may be first formed, and a layer having a high germaniumconcentration may be sequentially epitaxially grown.

In an implementation, a boron (B) concentration of the second epitaxiallayer 180 may be higher than a B concentration of the first epitaxiallayer 170. The first epitaxial layer 170 may be practically epitaxiallygrown without adding boron. In an implementation, the second epitaxiallayer 180 may be formed with the epitaxial growth with boron added.

The boron concentration may be discontinuously varied on a border of thefirst epitaxial layer 170 and the second epitaxial layer 180. This maybe attributable to the first epitaxial layer 170 and the secondepitaxial layer 180 being formed with the processes that use separateepitaxial growths from each other.

In principle, when boron is included, the silicon germanium layer usedin a source/drain of a transistor may help increase mobility of a holeby receiving compressive stress because of difference in particlelattice. However, as a side effect of the above, off currentcharacteristic in a device in off state may be degraded and junctioncapacitance between the source/drain and a fin region may increase.Accordingly, a depth of the source/drain may be kept below a certainlevel in order to reduce the side effect mentioned above.

The semiconductor device according to some exemplary embodiments mayhelp reduce the off current, and accordingly, reduce junctioncapacitance by including the first epitaxial layer 170 (that is undopedwith boron), at a lower portion of the second epitaxial layer 180(playing a role of the source/drain).

In FIG. 4, a horizontal axis is gate voltage, and a vertical axis isdrain current. FIG. 4 is a graphical representation of simulating draincurrent without considering material stress. t1, t2, and t3 indicate thesemiconductor device including the first epitaxial layer 170 of athickness which gradually increases, and t4 indicates the semiconductordevice excluding the first epitaxial layer 170.

Referring to FIG. 4, an amount of off current may be confirmed when agate voltage is negative. For example, off current of t4 in thesemiconductor device in which the first epitaxial layer 170 is excluded,may be confirmed to be greater than that of t1, t2, and t3 in thesemiconductor device in which the first epitaxial layer 170 is included.

As FIG. 4 is a simulation graphical representation which does notconsider stress effects, on current of t1 to t4 are appeared uniform(drain current with a gate voltage of at least 0), but on current of t1to t3 may appear greater when stress effect is considered.

In FIG. 5, a horizontal axis is gate voltage, and a vertical axis isjunction capacitance. Likewise FIG. 4, FIG. 5 shows t1, t2, and t3representing the semiconductor device including the first epitaxiallayer 170 of a gradually-increasing thickness, and t4 representing thesemiconductor device excluding the first epitaxial layer 170.

Referring to FIG. 5, it may be seen that, as a thickness of the firstepitaxial layer 170 may gradually increase, junction capacitance maydecrease.

Accordingly, the first epitaxial layer 170 may help further increase atotal depth of the source/drain (i.e., depths of the first epitaxiallayer 170 and the second epitaxial layer 180). For example, a depthcould be limited due to off current and junction capacitance. Such alimit may be avoided with the inclusion of the first epitaxial layer170, and a total depth of the source/drain may further increase.Accordingly, mobility of the hole may be further increased becausecompressive stress is further applied.

The interlayer insulating film 300 may be formed on the upper surface ofthe first epitaxial layer 170. The interlayer insulating film 300 may beformed between the first to third gate electrodes G1-G3, e.g., betweenthe first to third gate spacers 161-163.

For example, the interlayer insulating film 300 may include at least oneof silicon oxide, silicon nitride, silicon oxynitride, or a low-kdielectric material with a smaller dielectric constant than siliconoxide. In an implementation, the low-k dielectric material may include,e.g., flowable oxide (FOX), Tonen Silazene (TOSZ), undoped silica glass(USG), borosilica glass (BSG), phosphosilica glass (PSG),borophosphosilica glass (BPSG), plasma enhanced tetra ethyl orthosilicate (PETEOS), fluoride silicate glass (FSG), carbon doped siliconoxide (CDO), xerogel, aerogel, amorphous fluorinated carbon, organosilicate glass (OSG), parylene, bis-benzocyclobutenes (BCB), SiLK,polyimide, porous polymeric material, or a combination thereof.

The semiconductor device according to some exemplary embodiments mayhelp secure a greater depth margin of the source/drain due to theinclusion of the first epitaxial layer 170, and accordingly, stresscharacteristic of the source/drain may be further increased. Mobility ofa carrier of the source/drain may be further heightened, and operatingcharacteristics of the semiconductor device may be much enhanced.

Hereinbelow, the semiconductor device according to some exemplaryembodiments will be described with reference to FIG. 6. In the followingdescription, repeated descriptions overlapping with the exemplaryembodiments already provided above may not be described or described asbrief as possible for the sake of brevity.

FIG. 6 illustrates a cross sectional view of a semiconductor deviceaccording to some exemplary embodiments.

Referring to FIG. 6, the semiconductor device according to someexemplary embodiments may include the first epitaxial layer 171.

The first epitaxial layer 171 may be formed along the bottom surface andalong the side surface of the first trench 190. The first epitaxiallayer 171 may not be formed conformally along the bottom surface and theside surface of the first trench 190. For example, a thickness of thefirst epitaxial layer 171 may not be regular.

In an implementation, the first epitaxial layer 171 may include a firstportion 171 a (on the bottom surface of the first trench 190) and asecond portion 171 b (on the side surface of the first trench 190). Inan implementation, the first portion 171 a may be connected to thesecond portion 171 b. The second portion 171 b may be formed onsidewalls, e.g., both sidewalls, of the first trench 190, and the twosecond portions 171 b may be connected on the both sides with referenceto the first portion 171 a.

A thickness of the first portion 171 a may be thicker than a thicknessof the second portion 171 b. In an implementation, a thickness of eachof the first portion 171 a and the second portion 171 b also may not beregular. In an implementation, the second portion 171 b may have athinner thickness farther away from the bottom surface. A thickness ofthe first portion 171 a may become thinner nearer to the side surfacefrom the bottom surface.

Such distribution of a thickness may be attributable to a shape of thebottom surface of the first trench 190 and characteristics of theepitaxial growth. For example, the above distribution may beattributable to difference in a rate of the epitaxial growth in thethird direction Z1 from the bottom surface and a rate of the epitaxialgrowth in the first direction X1 from the side surface.

In an implementation, an uppermost portion of the upper surface of thefirst epitaxial layer 171 may be respectively in contact with the lowersurfaces of the first to third gate spacers 161-163. The above may beattributable to the contact of the first trench 190 to the lowersurfaces of the first and third gate spacers 161-163.

The second epitaxial layer 180 may be formed on the first epitaxiallayer 171. The second epitaxial layer 180 may not directly contact theside surface and the bottom surface of the first trench 190. Forexample, the second epitaxial layer 180 may be directly in contact withthe upper surface of the first epitaxial layer 171, and may be separatedfrom the side surface and the bottom surface of the first trench 190.For example, the lower surface of the second epitaxial layer 180 may bein contact with only the upper surface of the first epitaxial layer 171.

A germanium concentration of the first epitaxial layer 171 may be lowerthan that of the second epitaxial layer 180. According to an order ofthe processes, the first epitaxial layer 171 may be formed before thesecond epitaxial layer 180 is formed, and the second epitaxial layer 180may be formed on the first epitaxial layer 171 with the epitaxialgrowth. In an implementation, as the first epitaxial layer 171 is formedon the side surface, forming the second epitaxial layer 180 may beeasier.

The semiconductor device according to some exemplary embodiments in FIG.6 may have a structure formed as the epitaxial growth is performed onboth the side surface and the bottom surface of the first trench 190.Accordingly, junction capacitance between the first trench 190 and thefirst fin F1 may be improved also on the side surface.

Hereinbelow, the semiconductor device according to some exemplaryembodiments will be described with reference to FIG. 7. In the followingdescription, repeated descriptions overlapping with the exemplaryembodiments already provided above may not be described or described asbrief as possible for the sake of brevity.

FIG. 7 illustrates a cross sectional view of a semiconductor deviceaccording to some exemplary embodiments.

Referring to FIG. 7, the first trench 191 may be in contact with thefirst to third interfacial layers 111-113 on the lower portion of thefirst to third gate electrodes G1-G3 as well as the first to third gatespacers 161-163.

Generally, as the first to third gate spacers 161-163 are formed and thefirst trench 191 is formed, the upper surface of the first fin F1supporting the first to third gate spacers 161-163 on the lower portionof the first to third gate spacers 161-163 may slightly remain under thefirst to third gate spacers 161-163. However, the first to third gatespacers 161-163 may be partially etched in an inner sidewall with a gatelast fabrication in a subsequent process and, as a final result, thefirst to third gate spacers 161-163 may appear to be supported by thefirst epitaxial layer 171 and the second epitaxial layer 180 rather thanthe upper surface of the first fin F1. For example, as illustrated inFIG. 7, a portion of the first epitaxial layer 171 in the first trench191 may contact the first gate electrode G1 (e.g., the first interfaciallayer 111 of the first gate electrode G1).

Further, the first to third interfacial layers 111-113 and the first tothird high-k dielectric films 121-123 may be present and a germaniumconcentration of the first epitaxial layer 171 may be relatively low,and the second epitaxial layer 180 and the first to third gateelectrodes G1-G3 may be kept in an electrically insulated state fromeach other.

For example, the semiconductor device according to some exemplaryembodiments, as illustrated in FIG. 7, may help greatly improve yieldand operating characteristics of the semiconductor device because thesource/drain region is formed slightly larger, which in turn may helpincrease stress characteristics of the first epitaxial layer 170, andensure a large process margin.

Hereinbelow, the semiconductor device according to some exemplaryembodiments will be described with reference to FIG. 8. In the followingdescription, repeated descriptions overlapping with the exemplaryembodiments already provided above may not be described or described asbrief as possible for the sake of brevity.

FIG. 8 illustrates a cross sectional view of a semiconductor deviceaccording to some exemplary embodiments.

Referring to FIG. 8, the semiconductor device according to someexemplary embodiments may include a third epitaxial layer 185 and thesecond epitaxial layer 181 on the first epitaxial layer 170.

The third epitaxial layer 185 may be formed on the first epitaxial layer170. The third epitaxial layer 185 may be formed along the upper surfaceof the first epitaxial layer 170 and the side surface of the firsttrench 190. For example, the third epitaxial layer 185 may not be formedconformally along the upper surface of the first epitaxial layer 170 andthe side surface of the first trench 190. For example, a thickness ofthe third epitaxial layer 185 may not be regular.

The second epitaxial layer 181 may fill the portion of the first trench190 which is not filled even with the third epitaxial layer 185. Thesecond epitaxial layer 181 may be formed on the third epitaxial layer185 and separated from the sidewall of the first trench 190.

The third epitaxial layer 185 and the second epitaxial layer 181 mayboth include silicon germanium. In an implementation, a germanium tosilicon ratio of silicon germanium of the third epitaxial layer 185 maybe smaller than a germanium to silicon ratio of silicon germanium of thesecond epitaxial layer 181. For example, a germanium concentration ofthe third epitaxial layer 185 may be smaller than a germaniumconcentration of the second epitaxial layer 181.

Such structure of the semiconductor device according to some exemplaryembodiments in FIG. 8 may be attributable to the epitaxial growthcharacteristic. For example, it may be difficult to grow silicongermanium having a high germanium concentration directly on the firstfin F1 having a silicon material. Accordingly, a silicon germanium layermay be formed in the order of a lower germanium concentration.Accordingly, the third epitaxial layer 185 may be formed first, and thesecond epitaxial layer 181 may then be formed thereon with the epitaxialgrowth.

As a result, the second epitaxial layer 180 having a high germaniumconcentration may be easily formed, and as a result, the semiconductordevice according to some exemplary embodiments may maximize stresscharacteristics.

Hereinbelow, the semiconductor device according to some exemplaryembodiments will be described with reference to FIG. 9. In the followingdescription, repeated descriptions overlapping with the exemplaryembodiments already provided above may not be described or described asbrief as possible for the sake of brevity.

FIG. 9 illustrates a cross sectional view of a semiconductor deviceaccording to some exemplary embodiments.

Referring to FIG. 9, the semiconductor device according to someexemplary embodiments may sequentially include the third epitaxial layer185 and the second epitaxial layer 181 on the first epitaxial layer 171.

The first epitaxial layer 171 may have a same structure as the firstepitaxial layer 171 described in FIG. 6. The third epitaxial layer 185may be separated from the side surface of the first trench 190 andformed on the first epitaxial layer 171. The third epitaxial layer 185may have a germanium concentration that is higher than that of the firstepitaxial layer 171. Accordingly, the process of forming the thirdepitaxial layer 185 may be facilitated.

For example, a germanium concentration may increase in stages in anorder of the first epitaxial layer 171, the third epitaxial layer 185,and the second epitaxial layer 181. In view of fabrication process, inorder to form a silicon germanium layer having a gradually increasinggermanium concentration, the first epitaxial layer 171, the thirdepitaxial layer 185, and the second epitaxial layer 181 may besequentially formed on the bottom surface and the side surface of thefirst trench 190. As a result, the semiconductor device according tosome exemplary embodiments may maximize stress characteristics.

Hereinbelow, the semiconductor device according to some exemplaryembodiments will be described with reference to FIGS. 10 to 12. In thefollowing description, repeated descriptions overlapping with theexemplary embodiments already provided above may not be described ordescribed as brief as possible for the sake of brevity.

FIG. 10 illustrates a layout view of a semiconductor device according tosome exemplary embodiments, and FIG. 11 illustrates a cross sectionalview of a portion taken along lines A1-A1 and A2-A2 of FIG. 10. FIG. 12illustrates a cross sectional view taken along lines B1-B1 and B2-B2 ofFIG. 10.

Referring to FIGS. 10 to 12, the substrate 100 of the semiconductordevice according to some exemplary embodiments may include a firstregion I and a second region II.

The first region I and the second region II may be adjacent to eachother or may be spaced apart from each other. The first region I and thesecond region II may be respectively defined based on the first to thirddirections X1, Y1, Z1 and fourth to sixth directions X2, Y2, Z2. In animplementation, the first to third directions X1, Y1, Z1, and the fourthto sixth directions X2, Y2, Z2 may be same directions as each other ordifferent directions from each other.

The first region I and the second region II may be respectively a PMOSregion and an NMOS region. For example, the semiconductor device formedin the first region I may be the P-type MOSFET that uses the hole as acarrier, and the semiconductor device formed in the second region II maybe the N-type MOSFET that uses an electron as a carrier.

The first region I may be same as that of the semiconductor devicedescribed with reference to FIGS. 1 to 5. Hereinbelow, the second regionII will be mainly described.

The second fin F2 may be a part of the substrate 100, and may include anepitaxial layer grown from the substrate 100. For example, the secondfin F2 may include Si or SiGe. The second fin F2 may protrude from thesubstrate 100 in the sixth direction Z2. Accordingly, a height of theupper surface may be a reference to identify the substrate 100 and thesecond fin F2.

The second fin F2 may extend in the fourth direction X2. For example,the second fin F2 may have a long side in the fourth direction X2, and ashort side in the fifth direction Y2. In an implementation, the longside and the short side may be expressions representing relativelengths. For example, in a layout of a rectangle, the long side mayrepresent a side illustrated longer than the short side. For example,the second fin F2 may extend in the fourth direction X2 which is a longside direction. The second fin F2 may include a same material as thesubstrate 100. For example, the second fin F2 may include Si.

The field insulating film 105 may be formed on the substrate 100, whilepartially covering the sidewall of the second fin F2 and exposing theupper portion of the second fin F2. For example, the upper surface ofthe substrate 100 may be covered by the field insulating film 105,except for a portion where the second fin F2 is protruded. The fieldinsulating film 105 may be, e.g., an oxide film.

Fourth to sixth gate electrodes G4-G6 may extend in the fifth directionY2. The fourth to sixth gate electrodes G4-G6 may be formed on thesecond fin F2. For example, the fourth to sixth gate electrodes G4-G6may intersect the second fin F2. The fourth to sixth gate electrodesG4-G6 may be spaced apart from each other in the fourth direction X2.For example, the fourth to sixth gate electrodes G4-G6 may be disposedso that the long sides face each other in the fourth direction.Accordingly, the fourth to sixth gate electrodes G4-G6 may extend inparallel in the fourth direction.

The fourth gate electrode G4 may be positioned between the fifth gateelectrode G5 and the sixth gate electrode G6. For example, the fourth tosixth gate electrodes G4-G6 may be disposed in the fourth direction X2according to an order of the fifth gate electrode G5, the fourth gateelectrode G4, and the sixth gate electrode G6.

The fourth to sixth gate electrodes G4-G6 may be formed along the uppersurface and the side surface of the second fin F2 and the upper surfaceof the field insulating film 105. A cross sectional view of FIG. 12illustrates that the fourth to sixth gate electrodes G4-G6 arepositioned on the upper surface of the second fin F2.

Fourth to sixth interfacial layers 114-116 may be formed under thefourth to sixth gate electrodes G4-G6. Further, fourth to sixth high-kdielectric films 124-126 may be formed under the lower surface and theside surface of the fourth to sixth gate electrodes G4-G6. The fourth tosixth capping films 154-156 may be formed on the upper surfaces of thefourth to sixth gate electrodes G4-G6.

The fourth to sixth interfacial layers 114-116 may be formed on theupper surface of the second fin F2. The fourth to sixth interfaciallayers 114-116 may be formed by oxidizing the upper surface and the sidesurface of the second fin F2 and the upper surface of the substrate 100.In an implementation, the fourth to sixth interfacial layers 114-116 maybe formed by oxidizing the upper surface and the side surface of thesecond fin F2 instead of the upper surface of the surface 100.

The fourth to sixth interfacial layers 114-116 may be respectivelyformed between the fourth to sixth gate spacers 164-166. The fourth tosixth interfacial layers 114-116 may include a silicon oxide film whenthe second fin F2 includes silicon. The fourth to sixth interfaciallayers 114-116 may be respective films to adjust interfacialcharacteristics between the second fin F2 and the fourth to sixth gateelectrodes G4-G6. In an implementation, the fourth to sixth interfaciallayers 114-116 may be omitted.

The fourth to sixth high-k dielectric films 124-126 may be respectivelyformed on the fourth to sixth interfacial layers 114-116. The fourth tosixth high-k dielectric films 124-126 may include a high-k dielectricmaterial having a higher dielectric constant than the silicon oxidefilm. In an implementation, the high-k dielectric material may include,e.g., hafnium oxide, hafnium silicon oxide, lanthanum oxide, lanthanumaluminum oxide, zirconium oxide, zirconium silicon oxide, tantalumoxide, titanium oxide, barium strontium titanium oxide, barium titaniumoxide, strontium titanium oxide, yttrium oxide, aluminum oxide, leadscandium tantalum oxide, or lead zinc niobate.

When the fourth to sixth interfacial layers 114-116 are omitted in thesemiconductor device according to some exemplary embodiments, the fourthto sixth high-k dielectric films 124-126 may include not only the high-kdielectric material described above, but also, e.g., silicon oxide film,silicon oxynitride film, or silicon nitride film.

The fourth to sixth high-k dielectric films 124-126 may be respectivelyformed conformally along the inner side surfaces of fourth to sixth gatespacers 164-166 described below, as well as the upper surfaces of thefourth to sixth interfacial layers 114-116. Accordingly, uppermostportions of the upper surfaces of the fourth to sixth high-k dielectricfilms 124-126 may have a same height as the upper surfaces of the fourthto sixth gate spacers 164-166.

The fourth to sixth gate electrodes G4-G6 may respectively includefourth to sixth work function metals 134-136 and fourth to sixth fillmetals 144-146. For example, the fourth gate electrode G4 may includethe fourth work function metal 134 and the fourth fill metal 144, thefifth gate electrode G5 may include the fifth work function metal 135and the fifth fill metal 145, and the sixth gate electrode G6 mayinclude the sixth work function metal 136 and the sixth fill metal 146.

The fourth to sixth work function metals 134-136 may play a role ofadjusting a work function, and the fourth to sixth fill metals 144-146may play a role of filling the space formed by the fourth to sixth workfunction metals 134-136. The fourth to sixth work function metals134-136 may be, e.g., the N-type work function metals.

The semiconductor device according to some exemplary embodiments may bethe N-type MOSFET. In an implementation, the fourth to sixth workfunction metals 134-136 may be the N-type work function metals. In animplementation, the fourth to sixth work function metals 134-136 mayinclude, e.g., TiN, WN, TaN, TiC, TaC, TaCN, TaSIN, or a combinationthereof.

In an implementation, the fourth to sixth fill metals 144-146 mayinclude, e.g., W, Al, Cu, Co, Ti, Ta, poly-Si, SiGe, or a metal alloy.

The fourth to sixth capping films 154-156 may be formed on the fourth tosixth high-k dielectric films 124-126 and the fourth to sixth gateelectrodes G4-G6. For example, the fourth to sixth capping films 154-156may include SiN. The fourth to sixth capping films 154-156 may be incontact with the inner walls of the fourth to sixth gate spacers164-166. In an implementation, the upper surfaces of the fourth to sixthcapping films 154-156 may be on a same level as the upper surfaces ofthe fourth to sixth gate spacers 164-166. The upper surfaces of thefourth to sixth capping films 154-156 may be higher than the uppersurfaces of the fourth to sixth gate spacers 164-166.

The fourth to sixth gate spacers 164-166 may be disposed on thesidewalls of the fourth to sixth gate electrodes G4-G6 respectivelyextending in the fifth direction Y2. For example, the fourth to sixthgate spacers 164-166 may be respectively disposed on the sidewall of thestack structure of the fourth to sixth interfacial layers 114-116, thefourth to sixth high-k dielectric films 124-126, the fourth to sixthgate electrodes G4-G6, and the first to third capping films 151-153.

In an implementation, the fourth to sixth gate spacers 164-166 mayinclude, e.g., silicon nitride (SiN), silicon oxynitride (SiON), siliconoxide (SiO₂), silicon oxycarbonitride (SiOCN), or a combination thereof.

As exemplified in the drawings, the fourth to sixth gate spacers 164-166may include a single film, or may be a multi-spacer in which a pluralityof films are stacked. Shapes of the fourth to sixth gate spacers 164-166and shapes of the multi-spacers forming the fourth to sixth gate spacers164-166 may each be I- or L-shape, or a combination thereof depending onfabrication or purpose of utilization.

The second trench 200 may be formed between the fourth to sixth gateelectrodes G4-G6. The second trench 200 may be formed on the second finF2. For example, the second trench 200 may be formed between the fourthgate electrode G4 and the fifth gate electrode G5 and between the fourthgate electrode G4 and the sixth gate electrode G6.

The second trench 200 may be in contact with the lower surfaces of thefourth to sixth gate spacers 164-166. This may be attributable to thefact that the etch process of the second trench 200 includes the processof widening a side.

The bottom surface of the second trench 200 may be in a downwardlyconvex shape. In an implementation, the second trench 200 may have agreater depth farther away from the sidewall of the second trench 200.

A depth d2 of the second trench 200 may be different from a depth d1 ofthe first trench 190. For example, the depth d2 of the second trench 200may be less than the depth d1 of the first trench 190. Because thesecond trench 200 is in the NMOS region, applying tensile stress ratherthan compressive stress may help increase the mobility of electron as acarrier. Accordingly, a need to ensure a greater depth of silicongermanium may be relatively less compared to the PMOS region.Accordingly, the depth d2 of the second trench 200 may be formedshallower than the depth d1 of the first trench 190. In animplementation, the depth d2 of the second trench 200 may be deeper thanthe depth d1 of the first trench 190.

The first insulating layer 210 may be formed on the lower portion of thesecond trench 200. The first insulating layer 210 may fill only aportion of the second trench 200. The first insulating layer 210 maydirectly contact the bottom surface of the second trench 200 anddirectly contact a portion of the side surface of the second trench 200.

The first insulating layer 210 may include an insulating material. Forexample, the first insulating layer 210 may include at least one ofsilicon oxide and silicon nitride.

The fourth epitaxial layer 220 may be formed on the first insulatingfilm 210. The fourth epitaxial layer 220 may entirely fill the secondtrench 200 (e.g., remaining portions of the second trench 200).Accordingly, the side surface of the fourth epitaxial layer 220 maydirectly contact the rest of the sidewall of the second trench 200. Forexample, the side surface of the second trench 200 may contact the firstinsulating film 210 and the fourth epitaxial layer 220.

Unlike the first and second epitaxial layers 170, 180, the fourthepitaxial layer 220 may not include germanium. For example, the fourthepitaxial layer 220 may include silicon (Si) or silicon carbide (SiC)added with or further including phosphorus (P). For example, the fourthepitaxial layer 220 may include at least one of SiP and SiCP.

In the semiconductor device according to some exemplary embodiments, thefirst region I, i.e., the PMOS region may help enhance stresscharacteristics, off current, and junction capacitance, and although thesame method cannot be applied due to different stress characteristicbetween the regions, the second region II, i.e., the NMOS region mayalso help enhance off current characteristics with the inclusion of thefirst insulating layer 210. For example, the semiconductor deviceenhanced with operating characteristics suitable for characteristic ofeach region may be provided.

Hereinbelow, the semiconductor device according to some exemplaryembodiments will be described with reference to FIG. 13. In thefollowing description, repeated descriptions overlapping with theexemplary embodiments already provided above may not be described ordescribed as brief as possible for the sake of brevity.

FIG. 13 illustrates a cross sectional view of a semiconductor deviceaccording to some exemplary embodiments.

Referring to FIG. 13, the semiconductor device according to someexemplary embodiments may include an air gap AG in the second trench 200of the second region II.

The air gap AG may be surrounded by a portion of the bottom surface andthe side surface of the second trench 200, and the lower surface of thefourth epitaxial layer 220. The air gap AG may be formed so that thebottom surfaces of the fourth epitaxial layer 220 and the second trench200 are not in contact each other under the fourth epitaxial layer 220.

The air gap AG may serve as insulating region like the first insulatinglayer 210 of FIG. 11. For example, the air gap AG including air may bedielectric material having a highest dielectric constant, and it may actto efficiently prevent off current from the fourth epitaxial layer 220.

Hereinbelow, a method for fabricating the semiconductor device accordingto some exemplary embodiments will be explained with reference to FIGS.2 and 14 to 20. In the following description, repeated descriptionsoverlapping with the exemplary embodiments already provided above maynot be described or described as briefly as possible for the sake ofbrevity.

FIGS. 14 to 20 illustrate views of stages in a method for fabricating asemiconductor device according to some exemplary embodiments.

First, referring to FIG. 14, the first fin F1 may be formed on thesubstrate 100, and first to third dummy gate electrodes 21-23 may beformed on the first fin F1.

For example, first to third dummy gate insulating films 11-13 may beformed on the upper surface of the first fin F1, the first to thirddummy gate electrodes 21-23 may be formed on the first to third dummygate insulating films 11-13, and first to third dummy capping films31-33 may be formed on the first to the third dummy gate electrodes21-23.

In an implementation, the first to third dummy gate insulating films11-13, the first to third dummy gate electrodes 21-23, and the first tothird dummy capping films 31-33 may be respectively formed, or formed asbeing patterned en bloc in the stack structure.

The first to third dummy gate insulating films 11-13, the first to thirddummy gate electrodes 21-23, and the first to third dummy capping films31-33 may respectively extend in the second direction Y1 and may bespaced apart in the first direction X1. For example, they may extend inparallel in the second direction Y1.

Next, referring to FIG. 15, the first to third dummy gate insulatingfilms 11-13, the first to third dummy gate electrodes 21-23, and thefirst to third dummy capping films 31-33 may form the first to thirddummy gate spacers 41-43 on sides, e.g., both sides, of each stackstructure.

The first to third dummy gate spacers 41-43 may become the first tothird gate spacers 161-163 after undergoing a plurality of etchprocesses.

Next, referring to FIG. 16, the first trench 190 may be formed byetching the first fin F1.

In an implementation, the first trench 190 may be formed through aplurality of etch processes. A plurality of etch processes may include abowl etch process of expanding a width of the first trench 190. With thebowl etch process, the lower surfaces of the first to third dummy gatespacers 41-43 may be partially exposed.

Next, referring to FIG. 17, the lower portion of the first trench 190may form the first epitaxial layer 170.

In an implementation, the first epitaxial layer 170 may be grown withepitaxial growth. The first epitaxial layer 170 may be epitaxially grownwithout addition of boron. In an implementation, the first epitaxiallayer may be formed with the epitaxial growth on the side surface of thefirst trench 190 as in the example of the first epitaxial layer 171 ofFIG. 6.

Next, referring to FIG. 18, the first trench 190 may form the secondepitaxial layer 180 filling the first trench 190 (e.g., the remainingportions of the first trench 190).

The second epitaxial layer 180 may be formed on the first epitaxiallayer 170. The second epitaxial layer 180 may also be formed withepitaxial growth, but may include a boron addition. Accordingly, a boronconcentration of the second epitaxial layer 180 may be higher than aboron concentration of the first epitaxial layer 170.

In an implementation, a germanium concentration of the second epitaxiallayer 180 may be higher than a germanium concentration of the firstepitaxial layer 170. Due to characteristics of the epitaxial growth, itmay be difficult to grow a silicon germanium layer of a high germaniumconcentration on the silicon bottom surface and side surface of thefirst trench 190.

In an implementation, the epitaxial layer may be grown into multi-filmsas illustrated in FIG. 8.

The formation of the first epitaxial layer 170 and the second epitaxiallayer 180 of FIGS. 17 and 18 may involve a method of performing theepitaxial growth in-situ. As a result, the process condition such asimpurity control, temperature, pressure, and so on may be adjusted indetail and the growth of the epitaxial layer into a desired volume maybe obtained. Further, according to the continuity of the fabrication,fabrication cost and productivity may be enhanced.

Next, referring to FIG. 19, the interlayer insulating film 300 may beformed.

In an implementation, as illustrated in FIG. 19, the interlayerinsulating film 300 may have a same height as the upper surface of thefirst to third dummy capping films 31-33.

For example, as illustrated in FIG. 19, the interlayer insulating film300 may be formed to cover the first to third dummy capping films 31-33,and may later expose the upper surfaces of the first to third dummycapping films 31-33 with the planarization process, or otherwise, removethe first to third dummy capping films 31-33 with the planarizationprocess and expose the upper surface of the first to third dummy gateelectrodes 21-23. In this case, a height of the upper surface of theinterlayer insulating film 300 may be same as the upper surface of thefirst to third dummy gate electrodes 21-23. In this case, as a height ofthe first to third dummy gate spacers 41-43 decreases, the first tothird dummy gate spacers 41-43 may become the first to third gatespacers 161-163 of FIG. 2.

Next, referring to FIG. 20, the first to third dummy capping films31-33, the first to third dummy gate electrodes 21-23, and the first tothird dummy gate insulating films 11-13 may be removed.

Accordingly, the third to fifth trenches 51-53 may be formed. Third tofifth trenches 51-53 may extend in the second direction Y1. For example,the third trench 51 may be formed upon removal of a structure of thefirst dummy gate insulating film 11, the first dummy gate electrode 21,and the first dummy capping film 31. The fourth trench 52 may be formedupon removal of a structure of the second dummy gate insulating film 12,the second dummy gate electrode 22, and the second dummy capping film32. The fifth trench 53 may be formed upon removal of a structure of thethird dummy gate insulating film 13, the third dummy gate electrode 23,and the third dummy capping film 33.

In the method for fabricating the semiconductor device according to someexemplary embodiments, the first trench 190 may be in contact with theinner portions of the first to third dummy gate spacers 41-43, as inFIG. 7, as a portion of the inner walls of the first to third dummy gatespacers 41-43 is etched.

Next, referring to FIG. 2, on the third to fifth trenches 51-53, thefirst to third interfacial layers 111-113, the first to third high-kdielectric films 121-123, the first to third gate electrodes G1-G3, andthe first to third capping films 151-153 may be formed.

For example, the first interfacial layer 111, the first high-kdielectric film 121, the first gate electrode G1, and the first cappingfilm 151 may be formed in the third trench 51, the second interfaciallayer 112, the second high-k dielectric film 122, the second gateelectrode G2, and the second capping film 152 may be formed in thefourth trench 52, and the third interfacial layer 113, the third high-kdielectric film 123, the third gate electrode G3, and the third cappingfilm 153 may be formed in the fifth trench 53.

Next, through a chemical mechanical polishing (CMP) process, a flatupper surface may be obtained by removing a portion of the first tothird dummy gate spacers 41-43, a portion of the first to third cappingfilms 151-153, and a portion of the interlayer insulating film 300. Atthis time, the first to third gate spacers 161-163 may be completed.

By way of summation and review, a multi-gate transistor may facilitateeasy scaling, as it uses a three-dimensional channel. Further, currentcontrol capability may be enhanced without increasing a gate length ofthe multi-gate transistor. Furthermore, it is possible to effectivelysuppress short channel effect (SCE) which is the phenomenon that theelectric potential of a channel region is influenced by a drain voltage.

The embodiments may provide a semiconductor device with improvedoperating characteristics.

The embodiments may provide a method for fabricating a semiconductordevice with improved operating characteristics.

As is traditional in the field, embodiments are described, andillustrated in the drawings, in terms of functional blocks, units and/ormodules. Those skilled in the art will appreciate that these blocks,units and/or modules are physically implemented by electronic (oroptical) circuits such as logic circuits, discrete components,microprocessors, hard-wired circuits, memory elements, wiringconnections, and the like, which may be formed using semiconductor-basedfabrication techniques or other manufacturing technologies. In the caseof the blocks, units and/or modules being implemented by microprocessorsor similar, they may be programmed using software (e.g., microcode) toperform various functions discussed herein and may optionally be drivenby firmware and/or software. Alternatively, each block, unit and/ormodule may be implemented by dedicated hardware, or as a combination ofdedicated hardware to perform some functions and a processor (e.g., oneor more programmed microprocessors and associated circuitry) to performother functions. Also, each block, unit and/or module of the embodimentsmay be physically separated into two or more interacting and discreteblocks, units and/or modules without departing from the scope herein.Further, the blocks, units and/or modules of the embodiments may bephysically combined into more complex blocks, units and/or moduleswithout departing from the scope herein.

Example embodiments have been disclosed herein, and although specificterms are employed, they are used and are to be interpreted in a genericand descriptive sense only and not for purpose of limitation. In someinstances, as would be apparent to one of ordinary skill in the art asof the filing of the present application, features, characteristics,and/or elements described in connection with a particular embodiment maybe used singly or in combination with features, characteristics, and/orelements described in connection with other embodiments unless otherwisespecifically indicated. Accordingly, it will be understood by those ofskill in the art that various changes in form and details may be madewithout departing from the spirit and scope of the present invention asset forth in the following claims.

What is claimed is:
 1. A semiconductor device, comprising: a first finprotruding on a substrate and extending in a first direction; a firstgate electrode on the first fin, the first gate electrode intersectingthe first fin; a first trench formed within the first fin at a side ofthe first gate electrode; a first epitaxial layer filling a portion ofthe first trench, wherein a thickness of the first epitaxial layerbecomes thinner closer to a sidewall of the first trench; and a secondepitaxial layer filling the first trench on the first epitaxial layer,wherein a boron concentration of the second epitaxial layer is greaterthan a boron concentration of the first epitaxial layer.
 2. Thesemiconductor device as claimed in claim 1, wherein: the first finincludes silicon, and the first epitaxial layer and the second epitaxiallayer each include silicon germanium.
 3. The semiconductor device asclaimed in claim 2, wherein a germanium concentration of the firstepitaxial layer is lower than a germanium concentration of the secondepitaxial layer.
 4. The semiconductor device as claimed in claim 1,wherein the first epitaxial layer includes: a first portion on a bottomsurface of the first trench; and a second portion on a side surface ofthe first trench.
 5. The semiconductor device as claimed in claim 4,wherein a thickness of the first portion is thicker than a thickness ofthe second portion.
 6. The semiconductor device as claimed in claim 4,wherein the second portion is in contact with the first gate electrode.7. The semiconductor device as claimed in claim 1, further comprising athird epitaxial layer between the second epitaxial layer and the firstepitaxial layer, wherein a germanium concentration of the thirdepitaxial layer is lower than a germanium concentration of the secondepitaxial layer.
 8. The semiconductor device as claimed in claim 7,wherein a germanium concentration of the third epitaxial layer is higherthan a germanium concentration of the first epitaxial layer.
 9. Thesemiconductor device as claimed in claim 1, wherein an upper surface ofthe first epitaxial layer has a U shape in cross section.
 10. Thesemiconductor device as claimed in claim 1, further comprising a firstgate spacer on a sidewall of the first gate electrode, wherein the firsttrench is in contact with a lower surface of the first gate spacer. 11.A semiconductor device, comprising: a substrate that includes a firstregion and a second region; a first fin and a second fin protruding onthe substrate and respectively formed on the first region and the secondregion, wherein the first fin and the second fin respectively extend ina first direction and a second direction; a first gate electrode on thefirst fin and intersecting the first fin; a second gate electrode on thesecond fin and intersecting the second fin; a first trench within thefirst fin at a side of the first gate electrode; a second trench withinthe second fin at a side of the second gate electrode; a first epitaxiallayer partially filling a portion of the first trench; a secondepitaxial layer partially filling the first trench on the firstepitaxial layer; a third epitaxial layer filling the second trench; andan insulating region between a bottom surface of the second trench andthe third epitaxial layer.
 12. The semiconductor device as claimed inclaim 11, wherein the insulating region includes an insulating film. 13.The semiconductor device as claimed in claim 12, wherein the insulatingfilm includes silicon oxide or silicon nitride.
 14. The semiconductordevice as claimed in claim 11, wherein the insulating region includes anair gap.
 15. The semiconductor device as claimed in claim 11, wherein adepth of the first trench is different from a depth of the secondtrench.
 16. A semiconductor device, comprising: a substrate; a first finon the substrate, the first fin extending in a first direction; a firstgate electrode on the first fin, the first gate electrode intersectingthe first fin; a first trench in the first fin, the first trench beingat a side of the first gate electrode; a first epitaxial layer in abottom portion of the first trench; and a second epitaxial layer on thefirst epitaxial layer, the second epitaxial layer filling remainingportions of the first trench, wherein a boron concentration of thesecond epitaxial layer is discontinuous with a boron concentration ofthe first epitaxial layer at an interface between the first epitaxiallayer and the second epitaxial layer.
 17. The semiconductor device asclaimed in claim 16, wherein the boron concentration of the secondepitaxial layer is greater than the boron concentration of the firstepitaxial layer.
 18. The semiconductor device as claimed in claim 16,wherein: the first fin includes silicon, and the first epitaxial layerand the second epitaxial layer each include silicon germanium.
 19. Thesemiconductor device as claimed in claim 18, wherein a germaniumconcentration of the first epitaxial layer is lower than a germaniumconcentration of the second epitaxial layer.
 20. The semiconductordevice as claimed in claim 16, further comprising a third epitaxiallayer between the second epitaxial layer and the first epitaxial layer,wherein a germanium concentration of the third epitaxial layer is lowerthan a germanium concentration of the second epitaxial layer.